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| SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT6705 C1 C1 C2 C2 PARTMARKING DETAIL T6705 B1 E1 B2 E2 NPN PNP SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL VCBO VCEO VEBO ICM IC NPN 140 120 10 4 1 PNP -140 -120 -10 -4 -1 UNIT V V V A A C Operating and Storage Temperature Range Tj:Tstg -55 to +150 THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 369 ZDT6705 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Colllector-Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) VBE(on) hFE 2K 5K 2K 0.5K 150 90 15 0.5 1.6 MIN. 140 120 10 0.01 10 0.1 10 1.0 1.5 1.8 1.7 TYP. MAX. UNIT V V V A A A A CONDITIONS. IC=100A IC=10mA* IE=100A VCB=120V VCB=120V,T amb =100C VEB=8V VCES=120V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* IC=1A, IB=1mA* IC=1A, VCE=5V* IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* V V V V 100K MHz pF pF s s Transition Frequency Input Capacitance Output Capacitance Switching Times fT Cibo Cobo ton toff IC=100mA, VCE=10V f=20MHz VEB=500mV, f=1MHz VCB=10V, f=1MHz IC=500mA, VCE=10V IB1=IB2=0.5mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see ZDT605 datasheet. 3 - 370 ZDT6705 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE 3K 3K 3K 2K 160 90 15 0.6 0.8 MIN. -140 -120 -10 -0.1 -10 -10 -0.1 -1.3 -2.5 -1.8 -1.7 TYP. MAX. UNIT V V V A A A A CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-120V VCB=-120V, Tamb=100C VCES=-80V VEB=-8V IC=-1A, IB=-1mA* IC=-2A, IB=-2mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* V V V V 30K MHz pF pF s s Transition Frequency Input Capacitance Output Capacitance Switching Times fT Cibo Cobo ton toff IC=-100mA, VCE=-10V f=20MHz VEB=-0.5V, f=1MHz VCE=-10V, f=1MHz IC=-0.5A, VCE=-10V IB1=IB2=-0.5mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see ZDT705 datasheet. 3 - 371 |
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